IPB120N06S402ATMA2
MOSFET N-CH 60V 120A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB120N06S402ATMA2 is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage rating and a continuous drain current capability of 120A at 25°C, with a maximum power dissipation of 188W (Tc). Optimized for low on-resistance, it achieves a typical Rds(on) of 2.8mOhm at 100A and 10V gate drive. The device is housed in a PG-TO263-3-2 (TO-263-3, D2PAK) surface mount package, suitable for automated assembly processes. With a gate charge (Qg) of 195 nC at 10V and input capacitance (Ciss) of 15750 pF at 25V, it offers efficient switching characteristics. The operating temperature range is -55°C to 175°C (TJ). This component is AEC-Q101 qualified, making it suitable for automotive and industrial applications requiring high reliability and performance.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 140µA |
| Supplier Device Package | PG-TO263-3-2 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15750 pF @ 25 V |
| Qualification | AEC-Q101 |
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