IPB120N06N G
MOSFET N-CH 60V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB120N06N-G is a 60V N-Channel power MOSFET in a TO-263-3, D2PAK package. This device features a low on-resistance of 11.7 mOhm at a continuous drain current of 75A (Tc) and 10V gate drive. With a maximum power dissipation of 158W (Tc) and an operating temperature range of -55°C to 175°C (TJ), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 62 nC @ 10V and input capacitance (Ciss) of 2100 pF @ 30V. This component is commonly utilized in automotive and industrial power supply applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 94µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 30 V |
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