IPB120N04S3-02
MOSFET N-CH 40V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB120N04S3-02. This N-Channel power MOSFET features a 40V drain-source voltage rating and a continuous drain current capability of 120A at 25°C (Tc). Designed for high-efficiency power conversion, it offers a low on-resistance of 2 mOhm maximum at 80A, 10V. The device utilizes a PG-TO263-3 surface mount package, commonly known as D2PAK, suitable for demanding applications. Key parameters include a gate charge of 210 nC at 10V and input capacitance of 14300 pF at 25V. With a maximum power dissipation of 300W (Tc) and an operating temperature range of -55°C to 175°C, this component is well-suited for automotive, industrial, and power management systems. The technology employed is advanced Metal Oxide Semiconductor Field-Effect Transistor.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 230µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14300 pF @ 25 V |
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