IPB11N03LA
MOSFET N-CH 25V 30A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPB11N03LA. This surface-mount device features a 25V drain-source voltage and a continuous drain current capability of 30A at 25°C (Tc) with a maximum power dissipation of 52W (Tc). The low on-resistance of 11.2mOhm is achieved at 30A and 10V Vgs. Key parameters include a 4.5V to 10V gate drive voltage range, 11 nC gate charge, and 1358 pF input capacitance. The TO-263-3 (D2PAK) package is supplied on tape and reel. This component is suitable for applications in automotive and industrial power control systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1358 pF @ 15 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
