IPB114N03L G
MOSFET N-CH 30V 30A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPB114N03L-G is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vds) of 30V and a continuous drain current (Id) of 30A at 25°C (Tc), with a maximum power dissipation of 38W (Tc). The Rds(on) is specified at a low 11.4mOhm at 30A and 10V Vgs. It supports a gate drive voltage range from 4.5V to 10V and has a maximum gate charge (Qg) of 14 nC at 10V. Input capacitance (Ciss) is a maximum of 1500 pF at 15V. The IPB114N03L-G is housed in a TO-263-3, D2PAK package, suitable for surface mounting. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
