IPB110N06L G
MOSFET N-CH 60V 78A TO-263Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPB110N06L-G is an N-Channel Power MOSFET designed for demanding applications. This component features a 60 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 78 A at 25°C (Tc). The low on-resistance (Rds On) of 11 mOhm at 78 A and 10 V gate-source voltage ensures efficient power delivery. Key parameters include a gate charge (Qg) of 79 nC (Max) at 10 V and an input capacitance (Ciss) of 2700 pF (Max) at 30 V. The MOSFET is housed in a PG-TO263-3-2 package, designed for surface mounting. Its robust construction and performance characteristics make it suitable for use in industrial power supplies, automotive systems, and motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 78A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 94µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 30 V |
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