IPB107N20NAATMA1
MOSFET N-CH 200V 88A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB107N20NAATMA1 is a 200V N-Channel power MOSFET designed for high-efficiency power conversion applications. This device features a low on-resistance of 10.7mOhm at 88A and 10V Vgs, minimizing conduction losses. With a continuous drain current capability of 88A at 25°C (Tc) and a maximum power dissipation of 300W (Tc), it is well-suited for demanding power supplies, motor control, and automotive applications. The TO-263-3 (D2PAK) surface mount package offers robust thermal performance. Key parameters include a gate charge of 87nC at 10V and input capacitance of 7100pF at 100V, enabling efficient switching operation. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 88A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7100 pF @ 100 V |
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