IPB100N10S305ATMA1
MOSFET N-CH 100V 100A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel MOSFET, part number IPB100N10S305ATMA1, is designed for demanding power applications. This surface mount device offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 100A at 25°C (Tc). Featuring a low on-resistance (Rds On) of 4.8mOhm at 100A and 10V gate drive, this MOSFET ensures efficient power transfer. The device boasts a maximum power dissipation of 300W (Tc) and operates across an extended temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 176 nC (max) at 10V and input capacitance (Ciss) of 11570 pF (max) at 25V. Supplied in a PG-TO263-3-2 package, typically known as TO-263AB, this component is suitable for high-power switching, automotive systems, and industrial power supplies.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 240µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 176 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11570 pF @ 25 V |
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