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IPB100N08S2L07ATMA1

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IPB100N08S2L07ATMA1

MOSFET N-CH 75V 100A TO263-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ series IPB100N08S2L07ATMA1 is an N-channel power MOSFET designed for high-current applications. This surface-mount device features a drain-to-source voltage (Vdss) of 75 V and a continuous drain current (Id) of 100 A at 25°C with a maximum power dissipation of 300 W (Tc). The low on-resistance of 6.5 mOhm at 80 A and 10 V gate-source voltage (Vgs) makes it suitable for efficient power conversion. The device boasts a gate charge (Qg) of 246 nC at 10 V and an input capacitance (Ciss) of 5400 pF at 25 V. Packaged in a TO-263-3, D2PAK (2 Leads + Tab) with a PG-TO263-3-2 supplier device package, it operates across a temperature range of -55°C to 175°C (TJ). This component is widely utilized in automotive, industrial power supplies, and electric vehicle charging systems.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs6.5mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackagePG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs246 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5400 pF @ 25 V

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