IPB100N06S3L-04
MOSFET N-CH 55V 100A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPB100N06S3L-04 is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 100 A at 25°C (Tc), with a maximum power dissipation of 214 W (Tc). The low on-resistance (Rds On) of 3.5 mOhm is achieved at 80 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 362 nC at 10 V and input capacitance (Ciss) of 17270 pF at 25 V. This MOSFET operates across a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO263-3-2 surface mount package. It is suitable for demanding applications in the automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 150µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 362 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17270 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
