IPB100N06S3L-03
MOSFET N-CH 55V 100A TO263-3-2Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB100N06S3L-03. This device features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C, with a maximum power dissipation of 300W (Tc). The low on-resistance (Rds On) is 2.7mOhm at 80A and 10V gate-source voltage. Designed for surface mounting in a TO-263-3, D2PAK package, it operates across a temperature range of -55°C to 175°C. Key parameters include a maximum gate charge (Qg) of 550 nC at 10V and input capacitance (Ciss) of 26240 pF at 25V. This component is suitable for high-current switching applications in automotive and industrial power systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 230µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 550 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 26240 pF @ 25 V |
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