IPB100N06S3-04
MOSFET N-CH 55V 100A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™ IPB100N06S3-04 is an N-channel power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 100 A at 25°C, with a maximum power dissipation of 214 W at the same temperature. The extremely low on-resistance (Rds On) of 4.1 mOhm at 80 A and 10 V gate drive voltage minimizes conduction losses.
Key parameters include a gate charge (Qg) of 314 nC at 10 V and input capacitance (Ciss) of 14230 pF at 25 V. The device operates with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 150µA. Packaged in a PG-TO263-3-2 (TO-263AB) surface mount configuration, it is supplied on tape and reel. This MOSFET is suitable for use in automotive, industrial, and power supply sectors requiring robust power management solutions. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 314 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14230 pF @ 25 V |