IPB100N04S303ATMA1
MOSFET N-CH 40V 100A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB100N04S303ATMA1 is a 40V N-channel Power MOSFET designed for high-performance applications. This surface mount device, packaged in a PG-TO263-3-2 (TO-263AB), offers a continuous drain current of 100A (Tc) and a maximum power dissipation of 214W (Tc). Key electrical specifications include a low on-resistance of 2.5mOhm at 80A and 10V drive voltage, with a Vgs(th) of 4V at 150µA. Gate charge is rated at 145 nC @ 10V, and input capacitance (Ciss) is 9600 pF @ 25V. The MOSFET operates over an extended temperature range of -55°C to 175°C (TJ). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 25 V |
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