IPB100N04S2L03ATMA1
MOSFET N-CH 40V 100A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the OptiMOS™ IPB100N04S2L03ATMA1, an N-Channel Power MOSFET designed for high-performance applications. This component features a 40 V drain-source voltage and a continuous drain current of 100 A at 25°C, with a maximum power dissipation of 300 W. The low on-resistance of 3 mOhm at 80 A and 10 V gate-source voltage, coupled with a 4.5V to 10V drive voltage range, optimizes conduction losses. Key parameters include a maximum gate charge of 230 nC at 10 V and input capacitance of 6000 pF at 25 V. The IPB100N04S2L03ATMA1 utilizes a surface mount TO-263-3 (D2PAK) package, supplied on tape and reel, and operates across a temperature range of -55°C to 175°C. This device is suitable for use in automotive, industrial, and power supply applications requiring robust power switching.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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