IPB100N04S204ATMA1
MOSFET N-CH 40V 100A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™ IPB100N04S204ATMA1 is an N-channel power MOSFET designed for demanding applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current of 100A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The low on-resistance (Rds On) of 3.3mOhm at 80A and 10V drive voltage, coupled with its high current capability, makes it suitable for power conversion, automotive, and industrial motor control systems. The MOSFET utilizes Metal Oxide technology and is housed in a surface-mount PG-TO263-3-2 package, also known as TO-263-3, D2PAK. Key electrical characteristics include a gate charge (Qg) of 172 nC at 10V and an input capacitance (Ciss) of 5300 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This component is supplied in tape & reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 172 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |
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