IPB097N08N3 G
MOSFET N-CH 80V 70A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB097N08N3-G is an N-channel power MOSFET designed for high-efficiency power conversion. This component features a drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 70 A at 25°C, with a maximum power dissipation of 100 W. The device exhibits a low on-resistance (Rds On) of 9.7 mOhm at 46 A and 10 V, crucial for minimizing conduction losses. Key parameters include a gate charge (Qg) of 35 nC at 10 V and input capacitance (Ciss) of 2410 pF at 40 V. The IPB097N08N3-G is housed in a PG-TO263-3 (TO-263AB, D2PAK) surface-mount package and operates within a temperature range of -55°C to 175°C. This MOSFET is widely utilized in automotive, industrial, and server power supply applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 46µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 40 V |
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