IPB096N03LGATMA1
MOSFET N-CH 30V 35A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB096N03LGATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage and supports a continuous drain current of 35A at 25°C with a maximum power dissipation of 42W at the same temperature. The low on-resistance of 9.6mOhm at 30A and 10V gate-source voltage, coupled with a low gate charge of 15nC at 10V, ensures minimal conduction and switching losses. The MOSFET is housed in a TO-263-3, D2PAK surface-mount package, facilitating integration into compact designs. Key parameters include a Vgs(th) of 2.2V at 250µA and an input capacitance (Ciss) of 1600pF at 15V. This component is suitable for demanding applications across automotive and industrial sectors requiring robust power management solutions.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V |
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