IPB093N04LGATMA1
MOSFET N-CH 40V 50A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB093N04LGATMA1, offers a 40V drain-source breakdown voltage and a continuous drain current of 50A at 25°C case temperature. This device features a low on-resistance of 9.3mOhm maximum at 50A and 10V Vgs, facilitated by a 4.5V to 10V drive voltage range. The N-channel MOSFET technology is housed in a PG-TO263-3 (D2PAK) surface mount package, with a maximum power dissipation of 47W (Tc). Key electrical parameters include a maximum gate charge of 28nC at 10V Vgs and input capacitance (Ciss) of 2100pF at 20V Vds. Operating temperature range is -55°C to 175°C (TJ). This component is utilized in applications such as automotive power management and industrial motor control. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 16µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 20 V |
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