IPB08CNE8N G
MOSFET N-CH 85V 95A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB08CNE8N-G is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a drain-source voltage (Vdss) of 85V and a continuous drain current (Id) of 95A at 25°C, with a maximum power dissipation of 167W (Tc). The low on-resistance (Rds On) of 8.2mOhm at 95A and 10V gate drive ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 99 nC (max) and input capacitance (Ciss) of 6690 pF (max). The device is housed in a PG-TO263-3 (D2PAK) surface mount package, suitable for demanding thermal management. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial power supply, and server power applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 130µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 99 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6690 pF @ 40 V |
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