IPB085N06L G
MOSFET N-CH 60V 80A TO-263Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPB085N06L-G is a 60V N-Channel Power MOSFET designed for demanding applications. This device features an extremely low on-resistance of 8.2 mOhm at 80A and 10V Vgs, contributing to reduced conduction losses. The TO-263-3, D2PAK package with surface mount compatibility facilitates efficient board assembly. Key electrical parameters include a continuous drain current of 80A (Tc), a gate charge of 104 nC (Max) at 10V, and input capacitance of 3500 pF (Max) at 30V. The threshold voltage is 2V (Max) at 125µA. This MOSFET is commonly utilized in automotive, industrial power control, and high-power switching applications where efficiency and thermal performance are critical.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 80A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 125µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 30 V |
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