IPB083N10N3GATMA1
MOSFET N-CH 100V 80A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB083N10N3GATMA1 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 100V. This device features a low on-resistance (Rds On) of 8.3mOhm at a continuous drain current (Id) of 73A and a gate-source voltage (Vgs) of 10V. Designed for high-efficiency power conversion, it offers a continuous drain current of 80A (Tc) and a maximum power dissipation of 125W (Tc). The MOSFET utilizes a surface mount TO-263-3, D2PAK package, suitable for applications requiring robust thermal performance. Key parameters include a gate charge (Qg) of 55nC (Max) at 10V and input capacitance (Ciss) of 3980pF (Max) at 50V. This component is engineered for demanding applications in the automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 73A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 50 V |
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