IPB080N06N G
MOSFET N-CH 60V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB080N06N-G, is designed for high-performance applications. This surface-mount device features a 60V drain-source voltage and supports a continuous drain current of 80A at 25°C, with a maximum power dissipation of 214W. The N-Channel FET boasts a low on-resistance of 7.7mOhm at 80A and 10V Vgs. Key parameters include a gate charge of 93nC at 10V and an input capacitance of 3500pF at 30V. The IPB080N06N-G is packaged in a TO-263-3 (D2PAK) configuration, suitable for demanding thermal management. This component is widely utilized in industrial power supplies, automotive electronics, and server applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 30 V |
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