IPB075N04LGATMA1
MOSFET N-CH 40V 50A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPB075N04LGATMA1 is an N-channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C, with a maximum power dissipation of 56W (Tc). The low on-resistance of 7.5mOhm at 50A and 10V gate-source voltage, coupled with a gate charge of 36 nC at 10V, ensures excellent switching performance. It is housed in a TO-263-3, D2PAK package for surface mounting. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for demanding applications in automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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