IPB072N15N3GE8187ATMA1
MOSFET N-CH 150V 100A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPB072N15N3GE8187ATMA1. This surface-mount device features a 150V drain-source voltage and a continuous drain current of 100A at 25°C, with a maximum power dissipation of 300W (Tc). The MOSFET exhibits a low on-resistance of 7.2mOhm at 100A and 10V, facilitated by a 10V gate drive. Key parameters include a gate charge of 93 nC (max) and input capacitance of 5470 pF (max) at 75V. The component operates within a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO263-3-2 package, commonly known as TO-263AB. This component is suitable for applications in industrial power supplies, electric vehicle powertrains, and server power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5470 pF @ 75 V |
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