IPB06P001LATMA1
MOSFET P-CH 60V 100A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ P-Channel MOSFET, part number IPB06P001LATMA1, offers a 60V drain-source voltage and 100A continuous drain current at 25°C (Tc). This surface mount device, housed in a PG-TO263-3 package, features a maximum power dissipation of 300W (Tc) and a low on-resistance of 11mOhm at 100A and 10V. Key parameters include a gate charge of 281 nC at 10V and input capacitance of 8500 pF at 30V. The device operates across a temperature range of -55°C to 175°C (TJ). This component is suited for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 5.55mA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 281 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8500 pF @ 30 V |
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