IPB06N03LB G
MOSFET N-CH 30V 50A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB06N03LB-G is a 30V N-channel power MOSFET designed for high-efficiency power conversion applications. This device features a low Rds(on) of 6.3mOhm at 10V Vgs and 50A Id, ensuring minimal conduction losses. With a continuous drain current capability of 50A at 25°C (Tc) and a maximum power dissipation of 83W (Tc), it is suitable for demanding applications. The TO-263-3, D2PAK package facilitates surface mounting and efficient thermal management. Key electrical characteristics include a gate charge of 22 nC at 5V Vgs and an input capacitance of 2782 pF at 15V Vds. Operating over a temperature range of -55°C to 175°C (TJ), this MOSFET finds application in automotive, industrial power supplies, and consumer electronics.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2782 pF @ 15 V |
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