IPB06N03LB
MOSFET N-CH 30V 50A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPB06N03LB is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 50 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 6.3 mOhm at 50 A and 10 V, with a maximum power dissipation of 83 W (Tc). Designed for surface mounting, it is housed in a TO-263-3, D2PAK package. Key electrical characteristics include a gate charge (Qg) of 22 nC at 5 V and input capacitance (Ciss) of 2782 pF at 15 V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2782 pF @ 15 V |
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