IPB06N03LA
MOSFET N-CH 25V 50A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB06N03LA is a 25V N-Channel power MOSFET in a PG-TO263-3-2 package. This device offers a continuous drain current (Id) of 50A at 25°C (Tc) and a maximum power dissipation of 83W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 5.9mOhm at 30A and 10V, and a gate charge (Qg) of 22 nC at 5V. The input capacitance (Ciss) is a maximum of 2653 pF at 15V. Operating over a temperature range of -55°C to 175°C (TJ), it is suitable for applications requiring efficient power switching, commonly found in automotive and industrial power management systems. The MOSFET is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2653 pF @ 15 V |
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