IPB06CN10N G
MOSFET N-CH 100V 100A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB06CN10N-G is an N-Channel power MOSFET designed for high-efficiency power conversion applications. This component features a drain-source breakdown voltage of 100V and a continuous drain current capability of 100A at 25°C (Tc), with a maximum power dissipation of 214W (Tc). The device exhibits a low on-resistance of 6.2 mOhm at 100A and 10V gate drive, ensuring minimal conduction losses. Key parameters include a gate charge (Qg) of 139 nC at 10V and input capacitance (Ciss) of 9200 pF at 50V. The IPB06CN10N-G is housed in a PG-TO263-3 (D2PAK) surface-mount package and operates over an extended temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for demanding sectors such as automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 180µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 50 V |
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