IPB067N08N3GATMA1
MOSFET N-CH 80V 80A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPB067N08N3GATMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features an 80V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 136W (Tc). Its low on-resistance of 6.7mOhm at 73A and 10V gate-source voltage (Vgs) is achieved through advanced MOSFET technology. The device is packaged in a TO-263-3, D2PAK surface mount configuration, supplied on tape and reel. Key characteristics include a maximum gate charge (Qg) of 56 nC at 10V and input capacitance (Ciss) of 3840 pF at 40V. This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and supports Vgs from 6V to 10V for optimal performance, with a maximum Vgs of ±20V. The OptiMOS™ series is widely utilized in automotive and industrial power conversion systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 73A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 73µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3840 pF @ 40 V |
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