IPB065N15N3GE8187ATMA1
MOSFET N-CH 150V 130A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPB065N15N3GE8187ATMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 150 V and a continuous Drain Current (Id) of 130 A at 25°C. The low on-resistance (Rds On) of 6.5 mOhm is achieved at 100 A and 10 V gate drive. With a maximum power dissipation of 300 W (Tc), this device is suitable for high-power switching applications. Key parameters include a gate charge (Qg) of 93 nC at 10 V and input capacitance (Ciss) of 7300 pF at 75 V. The IPB065N15N3GE8187ATMA1 is packaged in a PG-TO263-7 (TO-263-7, D2PAK) for surface mounting and is supplied on a Tape & Reel. Its robust performance characteristics make it applicable in areas such as power supplies, motor control, and automotive electronics.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 75 V |
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