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IPB065N10N3GATMA1

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IPB065N10N3GATMA1

MOSFET N-CH 100V 80A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPB065N10N3GATMA1 is an N-channel Power MOSFET designed for demanding applications. This component features a 100V drain-source voltage and a continuous drain current of 80A at 25°C case temperature, with a maximum power dissipation of 150W (Tc). The low on-resistance of 6.5mOhm at 80A and 10V gate drive voltage is achieved through advanced MOSFET technology. Key parameters include a gate charge (Qg) of 64 nC at 10V and input capacitance (Ciss) of 4910 pF at 50V. The device is supplied in a PG-TO263-3 surface mount package, commonly known as D2PAK, and is provided on tape and reel. It operates across an extended temperature range of -55°C to 175°C (TJ). This Power MOSFET is utilized in industrial power supplies, automotive systems, and battery management applications.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs6.5mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id3.5V @ 90µA
Supplier Device PackagePG-TO263-3
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4910 pF @ 50 V

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