IPB065N06L G
MOSFET N-CH 60V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB065N06L-G is a power MOSFET featuring N-Channel technology. This component offers a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 250W (Tc). The Rds On is specified at a maximum of 6.2mOhm at 80A and 10V gate drive. Key parameters include a gate charge (Qg) of 157 nC (max) at 10V and input capacitance (Ciss) of 5100 pF (max) at 30V. The device supports gate-source voltages (Vgs) up to ±20V and a threshold voltage (Vgs(th)) of 2V (max) at 180µA. It is housed in a TO-263-3, D2PAK surface mount package and operates within a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 180µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 30 V |
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