IPB065N03LGATMA1
MOSFET N-CH 30V 50A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB065N03LGATMA1 is a N-Channel Power MOSFET designed for high-efficiency applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 50A at 25°C. With a low on-resistance of 6.5mOhm at 30A and 10V Vgs, it minimizes conduction losses. The MOSFET is housed in a PG-TO263-3 (TO-263-3, D2PAK) surface mount package, suitable for automated assembly. Key parameters include a gate charge of 23nC and input capacitance of 2400pF, facilitating fast switching. The maximum power dissipation is 56W at the case temperature. This component is commonly utilized in power management, automotive, and industrial power conversion systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 15 V |
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