IPB060N15N5ATMA1
MOSFET N-CH 150V 136A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB060N15N5ATMA1, is designed for demanding applications. This device features a Drain-Source Voltage (Vds) of 150 V and a continuous drain current (Id) of 136 A at 25°C, with a maximum power dissipation of 250 W. The low on-resistance of 6 mOhm at 68 A and 10 V (Vgs) is achieved through advanced MOSFET technology. The gate charge (Qg) is 68 nC maximum at 10 V, and the input capacitance (Ciss) is 5300 pF maximum at 75 V. Operating across a temperature range of -55°C to 175°C, this component is housed in a surface mount PG-TO263-7-3 package, commonly known as D2PAK. It is supplied in Tape & Reel packaging. This MOSFET is suitable for applications in power supply, industrial motor control, and automotive systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 136A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 68A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 180µA |
| Supplier Device Package | PG-TO263-7-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 75 V |
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