IPB05N03LB
MOSFET N-CH 30V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB05N03LB is a 30 V N-Channel power MOSFET designed for efficient power switching applications. This device features a low on-resistance of 5 mOhm maximum at 60 A and 10 V Vgs, minimizing conduction losses. With a continuous drain current capability of 80 A at 25°C (Tc) and a maximum power dissipation of 94 W (Tc), it is suitable for demanding power management tasks. The surface mount PG-TO263-3-2 package offers thermal efficiency for high-power density designs. Key parameters include a gate charge (Qg) of 25 nC maximum at 5 V and input capacitance (Ciss) of 3209 pF maximum at 15 V. This MOSFET is utilized in various industries including automotive and industrial power systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3209 pF @ 15 V |
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