IPB05CN10N G
MOSFET N-CH 100V 100A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB05CN10N-G is a 100V N-Channel Power MOSFET designed for demanding applications. This component features a low on-resistance of 5.1mOhm at 100A and 10V gate drive, enabling efficient power conversion. With a continuous drain current capability of 100A at 25°C and a maximum power dissipation of 300W, it is suitable for high-power switching. The device utilizes MOSFET technology and is housed in a TO-263-3, D2PAK package for surface mounting. Key electrical parameters include a gate charge of 181 nC at 10V and an input capacitance of 12000 pF at 50V. Operating temperature ranges from -55°C to 175°C. Applications include automotive power management, industrial motor control, and high-efficiency power supplies. The part is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 181 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 50 V |
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