IPB055N03LGATMA1
MOSFET N-CH 30V 50A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPB055N03LGATMA1, features a 30V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C (Tc). This device offers a low on-resistance of 5.5mOhm maximum at 30A and 10V Vgs. The IPB055N03LGATMA1 is delivered in a TO-263-3, D2PAK package, suitable for surface mount applications. Key electrical characteristics include a gate charge of 31 nC (max) at 10V Vgs and input capacitance of 3200 pF (max) at 15V Vds. This component is designed for operation across a wide temperature range from -55°C to 175°C (TJ) and has a maximum power dissipation of 68W (Tc). Its robust performance makes it suitable for demanding applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 15 V |
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