IPB054N08N3GATMA1
MOSFET N-CH 80V 80A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB054N08N3GATMA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a low on-resistance of 5.4mOhm at 80A and 10V Vgs, with a drain-source voltage (Vdss) of 80V. It offers a continuous drain current (Id) of 80A at 25°C (Tc) and a maximum power dissipation of 150W (Tc). The IPB054N08N3GATMA1 utilizes advanced MOSFET technology, delivering high efficiency and performance. Key parameters include a gate charge (Qg) of 69 nC at 10V and input capacitance (Ciss) of 4750 pF at 40V. Packaged in a TO-263-3, D2PAK, this surface mount component is suitable for operating temperatures from -55°C to 175°C (TJ). This power MOSFET finds application in automotive, industrial, and power supply sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 40 V |
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