IPB052N04NGATMA1
MOSFET N-CH 40V 70A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPB052N04NGATMA1, is a high-performance component designed for demanding applications. This surface-mount device features a 40 V drain-source voltage and a continuous drain current of 70 A at 25°C (Tc). The low on-resistance of 5.2 mOhm at 70 A and 10 V drive voltage, coupled with a maximum power dissipation of 79 W (Tc), ensures efficient operation. Key electrical characteristics include a gate charge (Qg) of 42 nC (Max) at 10 V and an input capacitance (Ciss) of 3300 pF (Max) at 20 V. The device operates within a temperature range of -55°C to 175°C (TJ) and is supplied in a TO-263-3, D2PAK package, presented on tape and reel. Its robust design makes it suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 33µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 20 V |
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