IPB050N06NGATMA1
MOSFET N-CH 60V 100A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB050N06NGATMA1 is a 60V, N-channel power MOSFET designed for high-current switching applications. This device features a low on-resistance of 4.7mOhm at 100A and 10V Vgs, enabling efficient power delivery. With a continuous drain current capability of 100A (Tc) and a maximum power dissipation of 300W (Tc), it is suitable for demanding thermal environments. The IPB050N06NGATMA1 utilizes a TO-263-3, D2PAK surface mount package, facilitating automated assembly. Key electrical characteristics include a gate charge (Qg) of 167 nC at 10V and input capacitance (Ciss) of 6100 pF at 30V. This component finds application in automotive systems, industrial power supplies, and power management solutions. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 167 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 30 V |
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