IPB04N03LB
MOSFET N-CH 30V 80A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB04N03LB is an N-channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 107W (Tc). The low on-resistance (Rds On) of 3.5mOhm at 55A and 10V, coupled with a gate charge (Qg) of 40nC at 5V, ensures excellent switching performance. The MOSFET is housed in a TO-263-3, D2PAK surface mount package, suitable for demanding thermal management. Operating across a temperature range of -55°C to 175°C (TJ), this device is utilized in automotive, industrial power, and power supply applications where robust performance and efficiency are critical. Drive voltages are specified from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Input capacitance (Ciss) is a maximum of 5203pF at 15V.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 70µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5203 pF @ 15 V |
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