IPB04N03LAT
MOSFET N-CH 25V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB04N03LAT is a 25V N-Channel Power MOSFET P-channel in a PG-TO263-3-2 package. This device offers a continuous drain current of 80A at 25°C (Tc) with a maximum power dissipation of 107W (Tc). The Rds(on) is specified at a low 3.9mOhm at 55A and 10V, with a Vgs range of 4.5V to 10V for optimal drive. Key parameters include a Vgs(th) of 2V at 60µA and a gate charge (Qg) of 32 nC at 5V. Input capacitance (Ciss) is 3877 pF at 15V. This MOSFET is designed for demanding applications in automotive and industrial sectors requiring high efficiency power conversion. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 60µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3877 pF @ 15 V |
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