IPB04N03LA
MOSFET N-CH 25V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB04N03LA is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source voltage (Vds) of 25 V and a continuous drain current (Id) of 80 A at 25°C (Tc), with a maximum power dissipation of 107 W (Tc). The low on-resistance of 3.9 mOhm at 55 A and 10 V (Rds On) minimizes conduction losses.
The IPB04N03LA utilizes a surface mount PG-TO263-3-2 package, also known as TO-263AB, facilitating integration into compact board designs. Key electrical characteristics include a gate charge (Qg) of 32 nC at 5 V and input capacitance (Ciss) of 3877 pF at 15 V. The device operates within a temperature range of -55°C to 175°C (TJ) and supports gate-source voltages up to ±20V. This MOSFET is well-suited for industrial, automotive, and consumer electronics power management systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 60µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3877 pF @ 15 V |
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