IPB049NE7N3GATMA1
MOSFET N-CH 75V 80A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel power MOSFET, part number IPB049NE7N3GATMA1. This surface-mount device features a 75V drain-source voltage and a continuous drain current of 80A at 25°C (Tc). The Rds On is specified at a maximum of 4.9mOhm at 80A and 10V gate drive. The component offers a maximum power dissipation of 150W (Tc) and a junction operating temperature range of -55°C to 175°C. Key parameters include a gate charge of 68 nC (Max) at 10V and input capacitance of 4750 pF (Max) at 37.5V. It is supplied in a TO-263-3, D2PAK package and is available on tape and reel. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 91µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 37.5 V |
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