IPB049N06L3GATMA1
MOSFET N-CH 60V 80A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB049N06L3GATMA1 is a 60V N-Channel Power MOSFET designed for high-performance applications. This component features an exceptionally low on-resistance of 4.7mOhm at 80A and 10V Vgs, enabling efficient power delivery. With a continuous drain current of 80A (Tc) and a maximum power dissipation of 115W (Tc), it is suitable for demanding thermal management scenarios. The device is housed in a PG-TO263-3 (TO-263-3, D2PAK) surface-mount package, facilitating integration into compact PCB designs. Key electrical characteristics include a gate charge of 50 nC at 4.5V and input capacitance of 8400 pF at 30V. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is utilized in automotive, industrial power supplies, and electric vehicle systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 58µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 30 V |
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