IPB048N15N5LFATMA1
MOSFET N-CH 150V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™-5 series IPB048N15N5LFATMA1 is an N-Channel power MOSFET in a PG-TO263-3 package. This component features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 120 A at 25°C, with a maximum power dissipation of 313 W (Tc). It offers a low on-resistance of 4.8 mOhm at 100 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 84 nC at 10 V and input capacitance (Ciss) of 380 pF at 75 V. The device supports a maximum gate-source voltage (Vgs) of ±20 V and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for high-power switching applications across automotive, industrial automation, and power supply sectors. It is supplied on tape and reel (TR).
Additional Information
Series: OptiMOS™-5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 255µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 75 V |
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