IPB044N15N5ATMA1
MOSFET N-CH 150V 174A TO263-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB044N15N5ATMA1 is an N-Channel Power MOSFET designed for high-performance applications. This component features a maximum drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 174 A at 25°C. The low on-resistance (Rds On) is specified at 4.4 mOhm at 87 A and 10 V gate drive. With a maximum power dissipation of 300 W at the case temperature, this MOSFET is suitable for demanding power conversion tasks. Key characteristics include a typical gate charge (Qg) of 100 nC at 10 V and input capacitance (Ciss) of 8000 pF at 75 V. The device is housed in a PG-TO263-7 (D2PAK) surface-mount package, supplied on tape and reel. This MOSFET is commonly utilized in industrial power supplies and electric vehicle charging infrastructure.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 174A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 87A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 264µA |
| Supplier Device Package | PG-TO263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8000 pF @ 75 V |
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