IPB042N10N3GE8187ATMA1
MOSFET N-CH 100V 100A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB042N10N3GE8187ATMA1 is an N-Channel power MOSFET designed for high-efficiency power conversion applications. This device features a Drain-Source voltage (Vdss) of 100 V and can handle a continuous Drain current (Id) of 100 A at 25°C, with a maximum power dissipation of 214 W (Tc). The low on-resistance (Rds On) of 4.2 mOhm at 50 A and 10 V drive voltage contributes to reduced conduction losses. Key parameters include a gate charge (Qg) of 117 nC at 10 V and input capacitance (Ciss) of 8410 pF at 50 V. The MOSFET is packaged in a TO-263-3, D2PAK surface mount configuration and operates across a temperature range of -55°C to 175°C. This component is suitable for use in automotive, industrial power supplies, and server applications requiring robust performance.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V |