IPB042N03LGATMA1
MOSFET N-CH 30V 70A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPB042N03LGATMA1 is an N-Channel power MOSFET designed for high-efficiency power conversion applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 70A at 25°C (Tc), with a maximum power dissipation of 79W (Tc). The low on-resistance of 4.2mOhm at 30A and 10V (Vgs) minimizes conduction losses. It operates with gate drive voltages ranging from 4.5V to 10V and has a typical gate charge of 38nC at 10V. The input capacitance (Ciss) is 3900pF. Packaged in a TO-263-3 (D2PAK) surface mount configuration, it is supplied on tape and reel. This MOSFET is suitable for automotive and industrial power supply designs, motor control, and battery management systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 15 V |
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